8 February 2012 Room-temperature type-I GaSb-based lasers in the 3.0 - 3.7 μm wavelength range
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82771B (2012) https://doi.org/10.1117/12.905930
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
GaSb-based type-I quantum-well lasers, emitting in the spectral range from 2 to 4 μm are promising light sources for various trace gas sensing systems by means of tunable diode laser absorption spectroscopy (TDLAS). Excellent device performance has been achieved so far in the spectral range from 2 to 3 μm, however, room-temperature operation above 3 μm is much more difficult to achieve. In this work we demonstrate the extension of room-temperature operation wavelength of GaSb-based type-I lasers up to 3.73 μm by implementation of high-quality quinternary AlGaInAsSb heterostructures.
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Kristijonas Vizbaras, Augustinas Vizbaras, Alexander Andrejew, Christian Grasse, Stephan Sprengel, Markus-Christian Amann, "Room-temperature type-I GaSb-based lasers in the 3.0 - 3.7 μm wavelength range", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771B (8 February 2012); doi: 10.1117/12.905930; https://doi.org/10.1117/12.905930
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