8 February 2012 High performance interband cascade lasers at 3.8 microns
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82771E (2012) https://doi.org/10.1117/12.910586
Event: SPIE OPTO, 2012, San Francisco, California, United States
An interband cascade laser design has been grown by molecular beam epitaxy using uncracked arsenic and antimony sources. Lasers were fabricated into both broad-area and narrow-ridge devices, with cavity lengths ranging between 1 mm and 4 mm. At 300K, under low-duty-cycle pulsed conditions, threshold current densities for lasers with 2-mm cavity lengths are as low as 395 A/cm2, with optical emission centered at a wavelength of ~3.82 μm at 300 K. Continuous-wave (cw) performance of the narrow-ridge devices has been achieved for temperatures up to almost 60°C. We present results of both pulsed (broad-area and ridge) and cw (ridge only) measurements on these lasers, including L-I-V, spectral, cavity-length, and Hakki-Paoli analyses.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. P. Leavitt, J. D. Bruno, J. L. Bradshaw, K. M. Lascola, J. T. Pham, F. J. Towner, S. Suchalkin, G. Belenky, I. Vurgaftman, C. L. Canedy, W. W. Bewley, C. S. Kim, M. Kim, C. D. Merritt, and J. R. Meyer "High performance interband cascade lasers at 3.8 microns", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771E (8 February 2012); doi: 10.1117/12.910586; https://doi.org/10.1117/12.910586

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