8 February 2012 Performance limitation and mitigation of longitudinal spatial hole burning in high-power diode lasers
Author Affiliations +
Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82771J (2012) https://doi.org/10.1117/12.909524
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Facets of high-power broad area diode lasers are typically coated with one high-reflecting and one partially reflecting layer to improve slope efficiency and maximize output power. The typical cavity lengths of commercial devices have also been progressively increasing, mainly to reduce temperature rise at the active region and improve laser performance and reliability. The asymmetric reflectivities and long cavity length, however, result in a highly inhomogeneous longitudinal profile of the photon density, which induces a spatially non-uniform carrier distribution, so-called longitudinal spatial hole burning (LSHB). A more uniform longitudinal photon and carrier distribution is believed to improve the overall gain of the cavity and reduce gain saturation, although further study is required to understand the impact of LSHB to power efficiency and its implication in laser design optimization to achieve higher peak powers. We present a phenomenological model that incorporates LSHB to describe longitudinal photon and carrier density inhomogeneity, as well as light-current characteristics of a diode laser. The impact of LSHB on the power efficiency is demonstrated through numerical calculation and can be significant under high-power operations. This presents new guidelines for high-power diode laser designs, in which LSHB imposes limits on reducing facet reflectivity and/or increasing cavity length, beyond which performance deteriorates. Alternatively, effects of LSHB can be mitigated through longitudinal patterning of the waveguide or contact to achieve high-power and high-efficiency diode lasers. We propose specially designed longitudinal patterning of electrical contact to mitigate LSHB. Ongoing device implementation will be used to demonstrate performance benefits.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhigang Chen, Zhigang Chen, Ling Bao, Ling Bao, John Bai, John Bai, Mike Grimshaw, Mike Grimshaw, Rob Martinsen, Rob Martinsen, Mark DeVito, Mark DeVito, Jim Haden, Jim Haden, Paul Leisher, Paul Leisher, } "Performance limitation and mitigation of longitudinal spatial hole burning in high-power diode lasers", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771J (8 February 2012); doi: 10.1117/12.909524; https://doi.org/10.1117/12.909524
PROCEEDINGS
8 PAGES


SHARE
Back to Top