Modeling gallium-arsenide-based and indium-phosphide-based distributed feedback quantum-well lasers

Meng-Mu Shih

doi:10.1117/12.907622

8 February 2012 Modeling gallium-arsenide-based and indium-phosphide-based distributed feedback quantum-well lasers

Meng-Mu Shih

Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82771Y (2012) https://doi.org/10.1117/12.907622
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

This work shows the modeling process of computing coupling coefficients of first-order distributed feedback (DFB) metal-semiconductor quantum-well lasers. InGaAsP/InP/metal lasers with wavelength 1300 nm and GaAs/AlGaAs/metal lasers with wavelength 850 nm are discussed and compared. The optical waveguide structure for such a laser has semiconductor layers and a built-in metal grating layer. The interface between the metal layer and its neighboring semiconductor layer has sinusoidal corrugation geometry. To compute the coupling coefficient of the metalgrating waveguide, a model is constructed by Floquet-Bloch formalism (FB). Ray optics technique (RO) is also used to calculate the coupling coefficients. These two methods have close results.

Citation Download Citation

Meng-Mu Shih "Modeling gallium-arsenide-based and indium-phosphide-based distributed feedback quantum-well lasers", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771Y (8 February 2012); https://doi.org/10.1117/12.907622

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