9 February 2012 Anti reflection coatings in semiconductor lasers: effects on power emission and external cavity lasing
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827721 (2012); doi: 10.1117/12.909705
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Parameters controlling light generation and emission in semiconductor lasers were analyzed. Effects of facet reflectivity on laser emission and the overall power dissipation were studied. It is shown with typical values that, optimized conditions of facet coating can reduce the laser power dissipation by several hundred milliwatts for optical output levels on the order of 10 mw. A mathematical model was developed for external cavity lasing of semiconductor lasers. Effects of threshold shift and changes in slope efficiency for external cavity operation, as reported in the literature, are explained by our model. Our model also explains reported observations of residual Fabry-Pérot modes of oscillation in external cavity operation. It is shown that anti reflection coating plays the most significant role in decreasing the threshold current in external cavity mode compared to that of Fabry Pérot lasing. It is estimated that a coating reflectivity of 10-5 with an external grating efficiency of 50% can result in a shift of threshold current by more than 50 mA. The effects of grating efficiency and facet reflectivity on increasing the window of feasible external cavity laser operation with reduced competition from residual modes were studied.
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M. Q. Huda, J. Tulip, W. Jäger, "Anti reflection coatings in semiconductor lasers: effects on power emission and external cavity lasing", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827721 (9 February 2012); doi: 10.1117/12.909705; https://doi.org/10.1117/12.909705
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KEYWORDS
Semiconductor lasers

Reflectivity

Antireflective coatings

Laser resonators

Reflection

Laser damage threshold

Mathematical modeling

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