6 February 2012 GaN-based microcavity polariton light emitting diodes
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Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.
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Tien-Chang Lu, Tien-Chang Lu, Ying-Yu Lai, Ying-Yu Lai, Si-Wei Huang, Si-Wei Huang, Jun-Rong Chen, Jun-Rong Chen, Yung-Chi Wu, Yung-Chi Wu, Shiang-Chi Lin, Shiang-Chi Lin, Shing-Chung Wang, Shing-Chung Wang, Yoshihisa Yamamoto, Yoshihisa Yamamoto, } "GaN-based microcavity polariton light emitting diodes", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82780O (6 February 2012); doi: 10.1117/12.908343; https://doi.org/10.1117/12.908343

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