Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga2O3 sacrificial layer

R. H. Horng; D. S. Wuu; S. L. Ou; H. H. Hsueh

doi:10.1117/12.907177

6 February 2012 Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga₂O₃ sacrificial layer

R. H. Horng, D. S. Wuu, S. L. Ou, H. H. Hsueh

Author Affiliations +

Proceedings Volume 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI; 82780Y (2012) https://doi.org/10.1117/12.907177
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

GaN epilayer can be grown on sapphire substrate with a Ga₂O₃ sacrificial layer. It was employed for the epilayer transferring from sapphire substrate to Cu substrate using the chemical lift-off process application. The (-201) oriented β-Ga₂O₃ thin film was first deposited on the c-plane sapphire substrate, followed by the GaN growth via metalorganic vapor phase epitaxy under N₂ and H₂ environment in sequence. The crystal quality of GaN epilayer can be improved dramatically with the regrowth in a H₂ ambient. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga₂O₃ sacrificial layer can be laterally etched out with a hydrofluoric solution. It is worthy to mention that the separated sapphire substrate can be cleaned and reused for LED epitaxial growth next time. It is benefiting the cost down for the LED fabrication and Green Photonics Development.

Citation Download Citation

R. H. Horng, D. S. Wuu, S. L. Ou, and H. H. Hsueh "Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga₂O₃ sacrificial layer", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82780Y (6 February 2012); https://doi.org/10.1117/12.907177

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