6 February 2012 Top-down fabrication of GaN-based nanorod LEDs and lasers
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Abstract
Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ~250kW/cm2.
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George T. Wang, George T. Wang, Qiming Li, Qiming Li, Jonathan Wierer, Jonathan Wierer, Jeffrey Figiel, Jeffrey Figiel, Jeremy B. Wright, Jeremy B. Wright, Ting S. Luk, Ting S. Luk, Igal Brener, Igal Brener, } "Top-down fabrication of GaN-based nanorod LEDs and lasers", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 827816 (6 February 2012); doi: 10.1117/12.909377; https://doi.org/10.1117/12.909377
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