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6 February 2012 Top-down fabrication of GaN-based nanorod LEDs and lasers
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Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ~250kW/cm2.
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George T. Wang, Qiming Li, Jonathan Wierer, Jeffrey Figiel, Jeremy B. Wright, Ting S. Luk, and Igal Brener "Top-down fabrication of GaN-based nanorod LEDs and lasers", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 827816 (6 February 2012);

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