6 February 2012 Simulation of light-emitting diodes for new physics understanding and device design
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Proceedings Volume 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI; 827819 (2012); doi: 10.1117/12.912305
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
The paper discusses various factors affecting internal quantum efficiency (IQE) of state-of-the-art III-nitride lightemitting diodes (LEDs). A general figure of merit for LED heterostructures, namely the quality factor, is proposed on the basis of a simple recombination model, which enables comparison of overall performances of the structures either emitting light at different wavelengths or having substantially different designs. The relationships between the quality factor, maximum value of IQE, and IQE droop with the current density are revealed. Some ways for IQE improvement and reducing its droop are considered. Among them, the use of short-period superlattice (SPSL) active regions is found to be quite promising. The operation of such structures and their properties are examined in detail by simulations accounting for quantum corrections to electron and hole transport within the quantum-potential concept.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, S. Y. Karpov, "Simulation of light-emitting diodes for new physics understanding and device design", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 827819 (6 February 2012); doi: 10.1117/12.912305; http://dx.doi.org/10.1117/12.912305
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KEYWORDS
Light emitting diodes

Quantum wells

Blue light emitting diodes

Indium gallium nitride

Internal quantum efficiency

Heterojunctions

Electron transport

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