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6 February 2012 GaN-based LEDs with air voids prepared by laser scribing and chemical etching
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Abstract
The authors report the formation of air-voids at GaN/cone-shaped-patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220°C for 5 and 20 min, respectively.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. J. Chang "GaN-based LEDs with air voids prepared by laser scribing and chemical etching", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82781E (6 February 2012); https://doi.org/10.1117/12.913294
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