Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells

Yung-Chi Yao; Yi-Ching Chen; Ya-Ju Lee

doi:10.1117/12.917953

6 February 2012 Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells

Yung-Chi Yao, Yi-Ching Chen, Ya-Ju Lee

Proceedings Volume 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI; 82781T (2012) https://doi.org/10.1117/12.917953
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.

Citation Download Citation

Yung-Chi Yao, Yi-Ching Chen, and Ya-Ju Lee "Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82781T (6 February 2012); https://doi.org/10.1117/12.917953

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