17 February 2012 A high-dynamic range (HDR) back-side illuminated (BSI) CMOS image sensor for extreme UV detection
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Proceedings Volume 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII; 82980B (2012); doi: 10.1117/12.906617
Event: IS&T/SPIE Electronic Imaging, 2012, Burlingame, California, United States
Abstract
This paper describes a back-side illuminated 1 Megapixel CMOS image sensor made in 0.18um CMOS process for EUV detection. The sensor applied a so-call "dual-transfer" scheme to achieve low noise, high dynamic range. The EUV sensitivity is achieved with backside illumination use SOI-based solution. The epitaxial silicon layer is thinned down to less than 3um. The sensor is tested and characterized at 5nm to 30nm illumination. At 17.4nm targeted wavelength, the detector external QE (exclude quantum yield factor) reaches almost 60%. The detector reaches read noise of 1.2 ph- (@17.4nm), i.e. close to performance of EUV photon counting.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinyang Wang, Bram Wolfs, Jan Bogaerts, Guy Meynants, Ali BenMoussa, "A high-dynamic range (HDR) back-side illuminated (BSI) CMOS image sensor for extreme UV detection", Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980B (17 February 2012); doi: 10.1117/12.906617; https://doi.org/10.1117/12.906617
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KEYWORDS
CMOS sensors

Sensors

Extreme ultraviolet

High dynamic range imaging

Quantum efficiency

High dynamic range image sensors

Transistors

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