Dynamic CCD pixel depletion edge model and the effects on dark current production

Justin C. Dunlap; M. M. Blouke; Erik Bodegom; Ralf Widenhorn

doi:10.1117/12.909217

15 February 2012 Dynamic CCD pixel depletion edge model and the effects on dark current production

Justin C. Dunlap, M. M. Blouke, Erik Bodegom, Ralf Widenhorn

Proceedings Volume 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII; 82980F (2012) https://doi.org/10.1117/12.909217
Event: IS&T/SPIE Electronic Imaging, 2012, Burlingame, California, United States

Abstract

The depletion edge in Charge-Coupled Devices (CCD) pixels is dependent upon the amount of signal charge located within the depletion region. A model is presented that describes the movement of the depletion edge with increasing signal charge. This dynamic depletion edge is shown to have an effect on the amount of dark current produced by some pixels. Modeling the dark current behavior of pixels both with and without impurities over an entire imager demonstrates that this moving depletion edge has a significant effect on a subset of the pixels. Dark current collected by these pixels is shown to behave nonlinearly with respect to exposure time and additionally the dark current is affected by the presence of illumination. The model successfully predicts unexplained aspects of dark current behavior previously observed in some CCD sensors.

Citation Download Citation

Justin C. Dunlap, M. M. Blouke, Erik Bodegom, and Ralf Widenhorn "Dynamic CCD pixel depletion edge model and the effects on dark current production", Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980F (15 February 2012); https://doi.org/10.1117/12.909217

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KEYWORDS

Data modeling

Imaging systems

Charge-coupled devices

3D modeling

Cameras

Oxides

Systems modeling

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