Studies of active Nd-doped silicon rich silicon oxide waveguides

Parastesh Pirasteh; Joël Charrier; Yannick Dumeige; Jean-Louis Doualan; Patrice Camy; Olivier Debieu; Yann G. Boucher; Fabrice Gourbilleau

doi:10.1117/12.910994

11 October 2011 Studies of active Nd-doped silicon rich silicon oxide waveguides

Parastesh Pirasteh, Joël Charrier, Yannick Dumeige, Jean-Louis Doualan, Patrice Camy, Olivier Debieu, Yann G. Boucher, Fabrice Gourbilleau

Author Affiliations +

Proceedings Volume 8306, Photonics, Devices, and Systems V; 83061J (2011) https://doi.org/10.1117/12.910994
Event: Photonics Prague 2011, 2011, Prague, Czech Republic

Abstract

The Nd³⁺-doped Silicon Rich Silicon Oxide (SRSO) layers were elaborated by reactive magnetron cosputtering. We report on refractive index measurements of Nd³⁺-doped SRSO layers obtained by both m-lines method and reflectance spectroscopy. From these measurements, the Si volume fraction and also the Nd³⁺-doped SRSO index dispersion were deduced by using the Bruggeman model. At 1.06 μm, work wavelength, Nd³⁺-doped SRSO refractive index was equal to 1.543 corresponding to a Si volume fraction of 6.5%. Optical losses measurements were performed on these waveguides at different wavelengths and were about 0.3 dB/cm at 1.55 μm and 1 dB/cm at 1.06 μm. Measurements are confirmed by theoretical models showing that the losses are essentially attributed to surface scattering. Guided fluorescence by top pumping at 488 nm on planar waveguides was studied as a function of the distance between the excitation area and the output of the waveguide and also as a function of the pump power. The guided fluorescence at 945 and 1100 nm was observed until 4mm of the output of the waveguide and, of course, decreased when the excitation area moved away from the output. The fluorescence intensity increased linearly for low pump power and this linear increasing of the guided fluorescence of Nd³⁺ excited by a non resonant excitation at 488 nm confirms the strong coupling between the Si- nanoparticles and rare earth ions.

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Parastesh Pirasteh, Joël Charrier, Yannick Dumeige, Jean-Louis Doualan, Patrice Camy, Olivier Debieu, Yann G. Boucher, and Fabrice Gourbilleau "Studies of active Nd-doped silicon rich silicon oxide waveguides", Proc. SPIE 8306, Photonics, Devices, and Systems V, 83061J (11 October 2011); https://doi.org/10.1117/12.910994

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