11 October 2011 Investigation of optical properties of SiC/(SiC)1-x(AlN)x heterostructures
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Proceedings Volume 8306, Photonics, Devices, and Systems V; 83061K (2011) https://doi.org/10.1117/12.912463
Event: Photonics Prague 2011, 2011, Prague, Czech Republic
Abstract
In this study the optical properties of SiC/(SiC)1-x(AlN)x heterostructures were investigated. The photoluminescence spectrum of (SiC)1-x(AlN)x samples at different temperatures and also the dependence of photoluminescence on wavelength of exciting light were studied. Absorption factor is defined using measured values of transmitting efficiency. The results of study of morphology and composition of obtained samples confirm growth regularity in single-crystal phase. It was observed that n-SiC/p-(SiC)1-x(AlN)x begins to shine at reverse voltage that a little exceed the voltage of irreversible breakdown.
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G. Safaraliev, G. Safaraliev, B. Bilalov, B. Bilalov, D. Dallaeva, D. Dallaeva, Sh. Ramasanov, Sh. Ramasanov, K. Geraev, K. Geraev, Pavel Tománek, Pavel Tománek, } "Investigation of optical properties of SiC/(SiC)1-x(AlN)x heterostructures", Proc. SPIE 8306, Photonics, Devices, and Systems V, 83061K (11 October 2011); doi: 10.1117/12.912463; https://doi.org/10.1117/12.912463
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