6 December 2011 Optimizing the power confinement in silicon slot waveguides by use of finite element method
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Proceedings Volume 8307, Passive Components and Fiber-Based Devices VIII; 83071A (2011) https://doi.org/10.1117/12.904947
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
In this paper, the power confinement and the power density in the slot region of a vertical and horizontal slot waveguide are optimized; full-vectorial H and E-field profiles along with Poynting vector are also shown for both of these silicon waveguides. Bending loss of such slot waveguides is also presented.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. M. H. Leung, D. M. H. Leung, X. B. Kan, X. B. Kan, B. M. A. Rahman, B. M. A. Rahman, N. Kejalakshmy, N. Kejalakshmy, K. T. V. Grattan, K. T. V. Grattan, } "Optimizing the power confinement in silicon slot waveguides by use of finite element method", Proc. SPIE 8307, Passive Components and Fiber-Based Devices VIII, 83071A (6 December 2011); doi: 10.1117/12.904947; https://doi.org/10.1117/12.904947
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