28 November 2011 High-speed 850 and 980 nm VCSELs for high-performance computing applications
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Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 830818 (2011) https://doi.org/10.1117/12.903698
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
The ever growing demand for more bandwidth in high-performance computing (HPC) applications leads to a continuous replacement of traditional copper-based links by optical interconnects at ever shorter transmission distances. However, this trend results in a more stringent performance requirements for laser light sources utilized in new generations of optical interconnects in respect to single channel speed, packaging density, power consumption and temperature stability, to make the technology competitive and commercially viable. Vertical cavity surface emitting lasers operating at different wavelengths, e. g. 850 or 980 nm, represent one possible solution for the short distance high density interconnects in HPC applications. Here we present ultra-high speed highly temperature stable 980 nm VCSELs operating error-free at the record high bit rate of 44 Gbit/s at room temperature and 38 Gbit/s at 85 °C for future interand intra-chip, and module-to-module optical links. Next we present high speed extremely energy efficient 850 nm VCSELs with record low energy consumptions of only 83 fJ/bit while operating at 17 Gbit/s and of only 117 fJ/bit at 25 Gbit/s. Our VCSELs enable ecologically sound and economically practical HPC designs.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Mutig, Alex Mutig, Philip Moser, Philip Moser, James A. Lott, James A. Lott, Philip Wolf, Philip Wolf, Werner Hofmann, Werner Hofmann, Nikolay N. Ledentsov, Nikolay N. Ledentsov, Dieter Bimberg, Dieter Bimberg, "High-speed 850 and 980 nm VCSELs for high-performance computing applications", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 830818 (28 November 2011); doi: 10.1117/12.903698; https://doi.org/10.1117/12.903698

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