28 November 2011 Novel silicon-on-insulator grating couplers based on CMOS poly-silicon gate layer
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Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081G (2011) https://doi.org/10.1117/12.904183
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
Grating couplers are widely investigated as a coupling interface between silicon-on-insulator waveguides and optical fibers. In this work, novel grating couplers based on strip poly-Si are proposed. This structure utilizes the poly-Si gate layer of the CMOS MOSFETs, and thus enables grating couplers integrated with CMOS circuits without adding any additional masks and process steps. Simulation results show that a coupling efficiency over 60% can be achieved between silicon-on-insulator waveguides and fibers.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chao Qiu, Chao Qiu, Zhen Sheng, Zhen Sheng, Le Li, Le Li, Albert Pang, Albert Pang, Aimin Wu, Aimin Wu, Junjie Du, Junjie Du, Jing Chen, Jing Chen, Xi Wang, Xi Wang, Fuwan Gan, Fuwan Gan, Shichang Zou, Shichang Zou, } "Novel silicon-on-insulator grating couplers based on CMOS poly-silicon gate layer", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081G (28 November 2011); doi: 10.1117/12.904183; https://doi.org/10.1117/12.904183
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