Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin film on Si substrate

C. Pawong; R. Chitaree; C. Soankwan

doi:10.1117/12.904420

28 November 2011 Investigation of the use of rotating linearly polarized light for characterizing SiO₂ thin film on Si substrate

C. Pawong, R. Chitaree, C. Soankwan

Author Affiliations +

Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081I (2011) https://doi.org/10.1117/12.904420
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China

Abstract

This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO₂ thinfilm on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters ψ and Δ. SiO₂ thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system.

Citation Download Citation

C. Pawong, R. Chitaree, and C. Soankwan "Investigation of the use of rotating linearly polarized light for characterizing SiO₂ thin film on Si substrate", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081I (28 November 2011); https://doi.org/10.1117/12.904420

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