28 November 2011 Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin film on Si substrate
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Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081I (2011) https://doi.org/10.1117/12.904420
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO2 thinfilm on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters ψ and Δ. SiO2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Pawong, C. Pawong, R. Chitaree, R. Chitaree, C. Soankwan, C. Soankwan, } "Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin film on Si substrate", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081I (28 November 2011); doi: 10.1117/12.904420; https://doi.org/10.1117/12.904420
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