28 November 2011 High-speed silicon optical modulators
Author Affiliations +
Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081M (2011) https://doi.org/10.1117/12.902767
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
In this paper we describe two silicon based optical modulators that have been fabricated as part of two projects in which the Surrey group is involved, the "UK Silicon Photonics project" funded by the UK Engineering and Physical Sciences Research Council (EPSRC), and the European "HELIOS" project funded by the European Union. The modulators exploit the carrier depletion effect in MZI structures, but have different advantages and disadvantages. One has a performance that is close to polarisation independence, whilst the other demonstrates a very high extinction ratio for a 40Gb/s silicon modulator. Both are shown to operate at 40Gb/s.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. T. Reed, G. T. Reed, D. Thomson, D. Thomson, F. Y. Gardes, F. Y. Gardes, N. G. Emerson, N. G. Emerson, J.-M. Fédéli, J.-M. Fédéli, "High-speed silicon optical modulators", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081M (28 November 2011); doi: 10.1117/12.902767; https://doi.org/10.1117/12.902767


40 Gb/s low-loss self-aligned silicon optical modulator
Proceedings of SPIE (March 13 2013)
Compact optical modulators with Si photonic crystals
Proceedings of SPIE (February 26 2013)
Optical modulation using the silicon platform
Proceedings of SPIE (March 13 2013)
Recent advances in high speed silicon optical modulator
Proceedings of SPIE (February 08 2007)

Back to Top