28 November 2011 Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth
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Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081W (2011) https://doi.org/10.1117/12.903970
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
A dual-depletion-region lumped electroabsorption modulator (DDR-LEAM) based on InP at 1550nm is designed and fabricated. The measurement results reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinction ratio. The simulation results show that the highly doped charge layer can concentrate almost all of the external applied voltage in MQW region and thus contribute to the identical extinction ratio curves. The expected 3-dB bandwidth of the DDR-LEAMs using an equivalent circuit model is more than twice lager than that of the conventional LEAM.
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Yongbo Shao, Yongbo Shao, Lingjuan Zhao, Lingjuan Zhao, Hongyan Yu, Hongyan Yu, Jiaoqing Pan, Jiaoqing Pan, Baojun Wang, Baojun Wang, Hongliang Zhu, Hongliang Zhu, Wei Wang, Wei Wang, } "Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081W (28 November 2011); doi: 10.1117/12.903970; https://doi.org/10.1117/12.903970
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