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28 November 2011 Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling
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Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081Y (2011)
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenchao Huang, Hui Xia, Shaowei Wang, Honghai Deng, Peng Wei, Lu Li, Fengqi Liu, Zhifeng Li, and Tianxin Li "Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081Y (28 November 2011);


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