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28 November 2011 Modeling of white light emitting diodes (WLED) based on GaN/InGaN multi quantum dots structure
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Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081Z (2011) https://doi.org/10.1117/12.904405
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
In this paper, we present a multi quantum dot (MQD) white light emitting Diode structure. In order to construct, white light spectrum, we use different quantum dot layers to generate blue, green and red colors. These layers contain quantum dots with active layers of In(x)Ga(1-x)N with GaN barrier. We investigate that these three colors is theoretically are extracted from each set of quantum dots, then these colors are combined with a desired intensities together and finally a light near white light will be created. Through adjusting material composition and quantum dot sizes, the white color quality can be improved. Piezoelectric and spontaneous polarization internal field are entered in our calculations.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Rostami, B. Rostami Dogolsara, H. Rasooli Saghai, and M. Leilaeioun "Modeling of white light emitting diodes (WLED) based on GaN/InGaN multi quantum dots structure", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081Z (28 November 2011); https://doi.org/10.1117/12.904405
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