17 December 2011 Structural and photoelectronic properties of a-SiGe:H thin films with varied Ge prepared by PECVD
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Proceedings Volume 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III; 83120Q (2011) https://doi.org/10.1117/12.904214
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films were fabricated by conventional radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) with a gas mixture of silane (SiH4) and germane (GeH4). The structural, optical and electrical properties of the films with different gas volume fraction of germane were investigated by Raman and Fourier transform infrared (FTIR) spectroscopy, ultraviolet and visible (UV-vis) spectroscopy and I-V curves, respectively. The amorphous network and structural disorder in the a-SiGe:H thin films were evaluated by Raman spectroscopy. Meanwhile, the Si-H and Ge-H configurations of the films were investigated by FTIR spectroscopy. From UV-vis spectroscopy and I-V curves, the optical and electrical properties of the testing films could be deduced with varied germanium. It can be concluded that the structural and photoelectronic properties of a-SiGe:H thin films can be influenced apparently by varing of GeH4/(SiH4+ GeH4) ratio in PECVD process.
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Rui Xu, Wei Li, Jian He, Kang-Cheng Qi, Ya-Dong Jiang, "Structural and photoelectronic properties of a-SiGe:H thin films with varied Ge prepared by PECVD", Proc. SPIE 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 83120Q (17 December 2011); doi: 10.1117/12.904214; https://doi.org/10.1117/12.904214
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