20 March 2012 Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator
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Abstract
The chemically amplified resist with a polymer-bound acid generator is a promising material for 16 nm node and beyond. However, its reaction mechanism is unknown. In this study, we propose a proton diffusion model for the chemically amplified resist with a polymer-bound acid generator. To examine the proton diffusion model, we carried out patterning experiments and simulation. The calculated latent images were compared with the measured line width and line edge roughness. The reaction mechanisms of the chemically amplified resist with a polymer-bound resist is discussed.
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Takahiro Kozawa, Takahiro Kozawa, Julius Joseph Santillan, Julius Joseph Santillan, Toshiro Itani, Toshiro Itani, } "Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832206 (20 March 2012); doi: 10.1117/12.916293; https://doi.org/10.1117/12.916293
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