22 March 2012 Printability study of pattern defects in the EUV mask as a function of hp nodes
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Abstract
Amplitude defects (or absorber defects), which are located in absorber patterns or multilayer surface, can be repaired during mask process while phase defects (or multilayer defects) cannot. Hence, inspection and handling of both defects should be separately progressed. Defect printability study of pattern defects is very essential since it provides criteria for mask inspection and repair. Printed defects on the wafer kill cells and reduce the device yield in wafer processing, and thus all the printable defects have to be inspected and repaired during the mask fabrication. In this study, pattern defect printability of the EUV mask as a function of hp nodes is verified by EUV exposure experiments. For 3x nm hp nodes, defect printability is evaluated by NXE3100. For 2x nm hp node, since resolution of a current EUV scanner is not enough, SEMATECH-Berkeley actinic inspection tool (AIT) as well as micro-field exposure tool (MET) in LBNL are utilized to verify it,. Furthermore those printability results are compared with EUV simulations. As a result, we define size of defects to be controlled in each device node.
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Tae-Geun Kim, Tae-Geun Kim, Hwan-Seok Seo, Hwan-Seok Seo, In-Yong Kang, In-Yong Kang, Chang Young Jeong, Chang Young Jeong, Sungmin Huh, Sungmin Huh, Jihoon Na, Jihoon Na, Seong-Sue Kim, Seong-Sue Kim, Chan-Uk Jeon, Chan-Uk Jeon, Iacopo Mochi, Iacopo Mochi, Kenneth A. Goldberg, Kenneth A. Goldberg, "Printability study of pattern defects in the EUV mask as a function of hp nodes", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220A (22 March 2012); doi: 10.1117/12.916052; https://doi.org/10.1117/12.916052
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