22 March 2012 A next-generation EMF simulator for EUV lithography based on the pseudo-spectral time-domain method
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Abstract
The FDTD method has difficulty in modeling buried defects in multilayered EUV masks because of the limitations of grid snapping, large numerical-dispersion errors and rectangular cells that do not fit the non-planar shapes of buried defects easily. In this paper, a rigorous EMF simulator based on the pseudo-spectral time-domain (PSTD) method is discussed. The PSTD method is free from the limitations of FDTD and can model buried defects in EUV masks accurately. Detailed comparison with FDTD is given to demonstrate the accuracy, speed and memory efficiency of PSTD for the rigorous simulation of buried defects in EUV masks.
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Michael S. Yeung, "A next-generation EMF simulator for EUV lithography based on the pseudo-spectral time-domain method", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220D (22 March 2012); doi: 10.1117/12.916471; https://doi.org/10.1117/12.916471
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