22 March 2012 EUV mask line edge roughness
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Abstract
Extreme ultraviolet (EUV) mask fabrication faces many unique challenges, including more stringent line edge roughness (LER) requirements. EUV mask absorber LER will need to be reduced to reliably meet the 2013 International Roadmap for Semiconductors line width roughness target of 3.3 nm. This paper will focus on evaluating resists modified and deployed specifically to reduce LER on EUV masks. Masks will be built, and the final mask absorber LER reported considering multiple imaging and analysis techniques. An assessment of best methods for mask LER analysis will be provided and used to judge resist performance.
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Amy E. Zweber, Emily Gallagher, Martha Sanchez, Tasuku Senna, Yoshiyuki Negishi, Toshio Konishi, Anne McGuire, Luisa Bozano, Phil Brock, and Hoa Truong "EUV mask line edge roughness", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220O (22 March 2012); doi: 10.1117/12.916291; https://doi.org/10.1117/12.916291
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