Paper
22 March 2012 A 6.7-nm beyond EUV source as a future lithography source
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Abstract
We demonstrate an efficient extreme ultraviolet (EUV) source for operation at λ = 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2%BW), which is 1.6 times larger than the 0.33% (0.6%BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takamitsu Otsuka, Bowen Li, Colm O'Gorman, Thomas Cummins, Deirdre Kilbane, Takeshi Higashiguchi, Noboru Yugami, Weihua Jiang, Akira Endo, Padraig Dunne, and Gerard O'Sullivan "A 6.7-nm beyond EUV source as a future lithography source", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832214 (22 March 2012); https://doi.org/10.1117/12.916351
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Cited by 7 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Plasmas

Gadolinium

Pulsed laser operation

Ions

Nd:YAG lasers

Lithography

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