23 March 2012 Development of EUV lithography tool technologies at Nikon
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6-mirror-system EUV projection optics design with NA of 0.4 plus was improved and the residual wavefront error was much reduced. Apodization is an issue for such high-NA EUV projection optics. Broad-band multilayer mirror can solve the problem. Broad-band multilayer mirrors were developed. Measured reflectivity performance of these multilayers was in good agreement with the designed performance. We have decided the measures to control contaminations of optics in HVM EUV exposure tools.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsuhiko Murakami, Katsuhiko Murakami, Tetsuya Oshino, Tetsuya Oshino, Hiroyuki Kondo, Hiroyuki Kondo, Hiroshi Chiba, Hiroshi Chiba, Yoshio Kawabe, Yoshio Kawabe, Takuro Ono, Takuro Ono, Noriaki Kandaka, Noriaki Kandaka, Atsushi Yamazaki, Atsushi Yamazaki, Takashi Yamaguchi, Takashi Yamaguchi, Ryo Shibata, Ryo Shibata, Masayuki Shiraishi, Masayuki Shiraishi, } "Development of EUV lithography tool technologies at Nikon", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832215 (23 March 2012); doi: 10.1117/12.917676; https://doi.org/10.1117/12.917676

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