23 March 2012 Low CoO grazing incidence collectors for EUVL HVM
Author Affiliations +
Media Lario Technologies (MLT) uses its proprietary replication by electroforming technology to manufacture grazing incidence collectors in support of the EUVL technology roadmap. With the experience of more than 20 alpha and preproduction collectors installed to date, and with the development results of the Advanced Cooling Architecture (ACA) for High Volume Manufacturing (HVM) collector generation, we present optical, lifetime, and thermo-optical performance of the grazing incidence collectors, meeting the requirements of HVM scanners for a throughput target of more than 100 wafers per hour. The ruthenium reflective layer of the grazing incidence collector is very forgiving to the hostile environment of the plasma sources, as proven by the installed base with 1-year lifetime expectancy. On the contrary, the multilayer-based collector is vulnerable to Sn deposition and ion bombardment, and the need to mitigate this issue has led to a steady increase of the complexity of the LPP source architecture. With the awareness that the source and collector module is the major risk against the timely adoption of EUVL in HVM, we propose a new paradigm that, by using the field-proven design simplicity and robustness of the grazing incidence collector in both LDP and LPP sources, effectively reduces the risk of both source architectures and improves their reliability.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Bianucci, G. Bianucci, G. L. Cassol, G. L. Cassol, N. M. Ceglio, N. M. Ceglio, G. Valsecchi, G. Valsecchi, F. Zocchi, F. Zocchi, } "Low CoO grazing incidence collectors for EUVL HVM", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832216 (23 March 2012); doi: 10.1117/12.916157; https://doi.org/10.1117/12.916157


LPP source system development for HVM
Proceedings of SPIE (April 06 2011)
EUCLIDES: first phase completed!
Proceedings of SPIE (July 20 2000)

Back to Top