23 March 2012 Resist outgassing characterization for qualification in high power EUV lithography
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For high volume manufacturing (HVM) utilizing extreme ultraviolet (EUV) lithography, practical resist outgassing qualification system is required. Witness sample (WS) testing systems using electron beam (EB) or low power EUV light have been proposed as candidates, however some issues remain on how these alternative light sources, in comparison to high power EUV, will affect resist chemical reactions and ultimately resist outgassing. In this paper, we have investigated resist induced optics contamination by utilizing two types of WS test systems of high power EUV light and EB sources. A correlation between these light sources is discussed, especially focusing on the resulting chemical phenomena depending on resist material properties.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiya Takahashi, Norihiko Sugie, Kazuhiro Katayama, Isamu Takagi, Yukiko Kikuchi, Eishi Shiobara, Hiroyuki Tanaka, Soichi Inoue, Takeo Watanabe, Tetsuo Harada, Hiroo Kinoshita, "Resist outgassing characterization for qualification in high power EUV lithography", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221E (23 March 2012); doi: 10.1117/12.916347; https://doi.org/10.1117/12.916347

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