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23 March 2012 EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300
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The major challenge for EUV resists at 22 nm half-pitch and below continues to be simultaneously achieving resolution, sensitivity, and line-width roughness (LWR) targets. An ongoing micro-exposure tool (MET) based evaluation of leading resists throughout 2011 shows that incremental progress toward meeting requirements continues apace, with best-of-breed candidates now capable of limiting 19 nm half-pitch resolution at sensitivities near or below 20 mJ/cm2 and LWR below 4 nm 3σ through process window. Evaluation of a selection of leading resists using an ASML NXE:3100 2nd generation full-field exposure tool demonstrates key performance improvements vs. the previous process-of- record (POR) setup resist including enhanced process window at 22 nm half-pitch and better contact hole uniformity. Champion limiting resolution performance for chemically amplified resists at a relaxed sensitivity specification has advanced to 16 nm half-pitch for both MET and full-field exposures.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Wallow, D. Civay, S. Wang, H. F. Hoefnagels, C. Verspaget, G. Tanriseven, A. Fumar-Pici, S. Hansen, J. Schefske, M. Singh, R. Maas, Y. van Dommelen, and J. Mallman "EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221J (23 March 2012);


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