As Extreme Ultraviolet Lithography (EUVL) enters the pre-production phase, the need to qualify the Electronic Design
Automation (EDA) infrastructure is pressing. In fact, it is clear that EUV will require optical proximity correction
(OPC), having its introduction shifted to more advanced technology nodes. The introduction of off-axis illumination will
enlarge the optical proximity effects, and EUV-specific effects such as flare and shadowing have to be fully integrated in
the correction flow and tested.
We have performed a model calibration exercise on the ASML NXE:3100 pre-production EUVL scanner using Brion's
Tachyon NXE EUV system. A model calibration mask has been designed, manufactured and characterized. The mask
has different flare levels, as well as model calibration structures through CDs and pitch. The flare modulation through
the mask is obtained by varying tiling densities. The generation of full-chip flare maps has been qualified against
experimental results. The model was set up and calibrated on an intermediate flare level, and validated in the full flare
Wafer data have been collected and were used as input for model calibration and validation. Two-dimensional structures
through CD and pitch were used for model calibration and verification. We discuss in detail the EUV model, and analyze
its various components, with particular emphasis to EUV-specific phenomena such as flare and shadowing.