23 March 2012 EUV OPC for the 20-nm node and beyond
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Abstract
Although the k1 factor is large for extreme ultraviolet (EUV) lithography compared to deep ultraviolet (DUV) lithography, OPC is still needed to print the intended patterns on the wafer. This is primarily because of new non-idealities, related to the inability of materials to absorb, reflect, or refract light well at 13.5nm, which must be corrected by OPC. So, for EUV, OPC is much more than conventional optical proximity correction. This work will focus on EUV OPC error sources in the context of an EUV OPC specific error budget for future technology nodes. The three error sources considered in this paper are flare, horizontal and vertical print differences, and mask writing errors. The OPC flow and computation requirements of EUV OPC are analyzed as well and compared to DUV. Conventional optical proximity correction is simpler and faster for EUV compared to DUV because of the larger k1 factor. But, flare and H-V biasing make exploitation of design hierarchy more difficult.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris H. Clifford, Yi Zou, Azat Latypov, Oleg Kritsun, Thomas Wallow, Harry J. Levinson, Fan Jiang, Deniz Civay, Keith Standiford, Ralph Schlief, Lei Sun, Obert R. Wood, Sudhar Raghunathan, Pawitter Mangat, Hui Peng Koh, Craig Higgins, Jeffrey Schefske, Mandeep Singh, "EUV OPC for the 20-nm node and beyond", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221M (23 March 2012); doi: 10.1117/12.916171; https://doi.org/10.1117/12.916171
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