23 March 2012 Development of practical flare correction tool for full chip in EUV lithography
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Abstract
A practical flare-aware optical proximity correction (OPC) tool for full-chip level has been developed for upcoming extreme ultraviolet lithography (EUVL). The conventional flare-aware OPC method for EUVL is unsuitable for practical use because it requires enormous time for lithography simulation to compensate for the long-range flare effect. By separating the lumped flare-aware OPC step into (1) the OPC step and (2) the flare correction step, the runtime required for lithography simulation is reduced to 1% by applying the same OPC for the identical pattern at different positions in step 1. And we found that there is a linear relation between amount of flare and correction bias for each pattern variation. Using this relation, a fast rule-based correction method can be adopted in step 2 without deterioration of correction accuracy for any pattern variation. Our new correction tool reduces the run-time to 1/70, which means it is the same as in the case of optical lithography for full-chip level, and also satisfies the target OPC residual of ±1nm. Consequently, it has been demonstrated that our new correction is practical and promising for the full-chip in EUVL in terms of run-time and correction accuracy.
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Taiga Uno, Taiga Uno, Hiromitsu Mashita, Hiromitsu Mashita, Masahiro Miyairi, Masahiro Miyairi, Toshiya Kotani, Toshiya Kotani, } "Development of practical flare correction tool for full chip in EUV lithography", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221N (23 March 2012); doi: 10.1117/12.916129; https://doi.org/10.1117/12.916129
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