23 March 2012 Development of practical flare correction tool for full chip in EUV lithography
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Abstract
A practical flare-aware optical proximity correction (OPC) tool for full-chip level has been developed for upcoming extreme ultraviolet lithography (EUVL). The conventional flare-aware OPC method for EUVL is unsuitable for practical use because it requires enormous time for lithography simulation to compensate for the long-range flare effect. By separating the lumped flare-aware OPC step into (1) the OPC step and (2) the flare correction step, the runtime required for lithography simulation is reduced to 1% by applying the same OPC for the identical pattern at different positions in step 1. And we found that there is a linear relation between amount of flare and correction bias for each pattern variation. Using this relation, a fast rule-based correction method can be adopted in step 2 without deterioration of correction accuracy for any pattern variation. Our new correction tool reduces the run-time to 1/70, which means it is the same as in the case of optical lithography for full-chip level, and also satisfies the target OPC residual of ±1nm. Consequently, it has been demonstrated that our new correction is practical and promising for the full-chip in EUVL in terms of run-time and correction accuracy.
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Taiga Uno, Taiga Uno, Hiromitsu Mashita, Hiromitsu Mashita, Masahiro Miyairi, Masahiro Miyairi, Toshiya Kotani, Toshiya Kotani, "Development of practical flare correction tool for full chip in EUV lithography", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221N (23 March 2012); doi: 10.1117/12.916129; https://doi.org/10.1117/12.916129
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