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23 March 2012 The role resist plays in EUVL extensibility
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Abstract
In this paper, the impact of resist on the lithographic process window is investigated. To estimate the resolution limit of EUVL due to the limitation from resist performance, a simplified resist model, called diffused aerial image model (DAIM), is employed. In the DAIM, the resist is characterized by the acid diffusion length, or more generally, resist blur. Lithographic process windows with resists of various blurs are then calculated for different technology nodes. It is concluded that the resist blur needs to be smaller than 8 nm to achieve a reasonable window for the technology node with the minimum pitch of 32 nm. The performance of current resists can barely fulfill this requirement. Investigation of a more refined resist model is also initiated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinn-Sheng Yu, Anthony Yen, Chih-T'sung Shih, Yen-Cheng Lu, Shu-Hao Chang, Jui-Ching Wu, Jimmy Hu, and Timothy Wu "The role resist plays in EUVL extensibility", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222A (23 March 2012); https://doi.org/10.1117/12.916024
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