23 March 2012 Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning
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Prompted by the fact that the International Technology Roadmap for Semiconductors (ITRS) has declared no proven optical solutions are available for sub 22nm hp patterning, we have investigated e-Beam and Extreme Ultraviolet (EUV) resist performance with a view to High Volume Manufacturing (HVM) at these design rules. Since these patterning technologies are considered the leading candidates to replace Immersion ArF (ArFi) multilevel patterning schemes, it was deemed prudent to assess the readiness of these imaging options. We review the advantages and disadvantages of each patterning method and highlight general technology challenges as well as resist specific challenges. In terms of resist specific challenges, we primarily focus on Resolution, Linewidth roughness and Sensitivity (RLS) tradeoffs for both e-Beam and EUV patterning. These metrics are of particular relevance as the industry continues to contend with the well known tradeoffs between these performance criteria. The RLS relationship is probed for both line space and contact hole patterns with each exposure wavelength. In terms of resist selection, we focus on our advanced Polymer Bound PAG (PBP) resist platform as it has been designed for high resolution applications. We also assess resist outgassing during EUV exposure as it is a potential barrier to adoption of EUV for HVM.
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James Cameron, James Cameron, Jim Thackeray, Jim Thackeray, Jin Wuk Sung, Jin Wuk Sung, Suzanne M. Coley, Suzanne M. Coley, Vipul Jain, Vipul Jain, Owendi Ongayi, Owendi Ongayi, Mike D. Wagner, Mike D. Wagner, Paul LaBeaume, Paul LaBeaume, Amy Kwok, Amy Kwok, David Valeri, David Valeri, Marie Hellion, Marie Hellion, Béatrice Icard, Béatrice Icard, Bernard Dal'zotto, Bernard Dal'zotto, Claire Sourd, Claire Sourd, Laurent Pain, Laurent Pain, } "Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222F (23 March 2012); doi: 10.1117/12.916598; https://doi.org/10.1117/12.916598

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