Front Matter
Proc. SPIE 8323, Front Matter: Volume 8323, 832301 (19 April 2012); doi: 10.1117/12.928431
Keynote Session
Proc. SPIE 8323, Future of multiple-e-beam direct-write systems, 832302 (21 March 2012); doi: 10.1117/12.919747
Proc. SPIE 8323, Block copolymer directed self-assembly enables sublithographic patterning for device fabrication, 832303 (6 March 2012); doi: 10.1117/12.918312
Imprint I: Processing
Proc. SPIE 8323, Design considerations for UV-NIL resists, 832305 (21 March 2012); doi: 10.1117/12.915812
Proc. SPIE 8323, Selective transfer of nanostructured assemblies onto an arbitrary substrate by nanoimprinting, 832306 (21 March 2012); doi: 10.1117/12.916595
Directed Self-Assembly I: Resist Processing: Joint Session with Conference 8325
Proc. SPIE 8323, Pattern scaling with directed self assembly through lithography and etch process integration, 83230B (21 March 2012); doi: 10.1117/12.916311
Proc. SPIE 8323, All track directed self-assembly of block copolymers: process flow and origin of defects, 83230D (21 March 2012); doi: 10.1117/12.916410
Proc. SPIE 8323, Synthesis and characterization of self-assembling block copolymers containing fluorine groups, 83230E (21 March 2012); doi: 10.1117/12.916418
Maskless/Direct-Write Lithography I
Proc. SPIE 8323, Sub-20nm hybrid lithography using optical, pitch-division, and e-beam, 83230F (21 March 2012); doi: 10.1117/12.916486
Proc. SPIE 8323, 50 keV electron multibeam mask writer for the 11nm HP node: first results of the proof of concept tool (eMET POC), 83230G (21 March 2012); doi: 10.1117/12.916613
Proc. SPIE 8323, Reflective electron-beam lithography: progress toward high-throughput production capability, 83230H (21 March 2012); doi: 10.1117/12.916090
Modeling of Alternative Lithographic Processes
Proc. SPIE 8323, Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning, 83230J (21 March 2012); doi: 10.1117/12.916616
Proc. SPIE 8323, Self-consistent field theory of directed self-assembly in laterally confined lamellae-forming diblock copolymers, 83230K (21 March 2012); doi: 10.1117/12.916577
Metrology and Inspection for Alternative Lithographic Technologies: Joint Session with Conference 8324
Proc. SPIE 8323, Directed self-assembly defectivity assessment. Part II, 83230N (16 April 2012); doi: 10.1117/12.917993
Proc. SPIE 8323, Pattern density multiplication by direct self assembly of block copolymers: toward 300mm CMOS requirements, 83230O (21 March 2012); doi: 10.1117/12.916400
Proc. SPIE 8323, Measurement of placement error between self-assembled polymer patterns and guiding chemical prepatterns, 83230P (21 March 2012); doi: 10.1117/12.916421
Hybrid Directed Self-Assembly and Imprint Processes (DSA II and Imprint II)
Proc. SPIE 8323, Evaluation of ordering of directed self-assembly of block copolymers with pre-patterned guides for bit patterned media, 83230S (21 March 2012); doi: 10.1117/12.916304
Proc. SPIE 8323, Line-frequency doubling of directed self-assembly patterns for single-digit bit pattern media lithography, 83230U (21 March 2012); doi: 10.1117/12.916589
Proc. SPIE 8323, Imprint process performance for patterned media at densities greater than 1Tb/in2, 83230V (21 March 2012); doi: 10.1117/12.918042
Directed Self-Assembly III: Patterning
Proc. SPIE 8323, Contact-hole patterning for random logic circuits using block copolymer directed self-assembly, 83230W (21 March 2012); doi: 10.1117/12.912804
Proc. SPIE 8323, Progress towards the integration of optical proximity correction and directed self-assembly of block copolymers with graphoepitaxy, 83230X (21 March 2012); doi: 10.1117/12.916525
Proc. SPIE 8323, Contact hole shrink process using directed self-assembly, 83230Y (21 March 2012); doi: 10.1117/12.915652
Proc. SPIE 8323, Investigation of high x block copolymers for directed self-asssembly: synthesis and characterization of PS-b-PHOST, 832310 (16 April 2012); doi: 10.1117/12.918081
Maskless/Direct-Write Lithography II
Proc. SPIE 8323, REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography, 832311 (21 March 2012); doi: 10.1117/12.919744
Proc. SPIE 8323, Active-matrix nc-Si electron emitter array for massively parallel direct-write electron-beam system, 832312 (21 March 2012); doi: 10.1117/12.916250
Proc. SPIE 8323, Complementary patterning demonstration with e-beam direct writer and spacer DP process of 11nm node, 832313 (21 March 2012); doi: 10.1117/12.915821
Proc. SPIE 8323, CP element based design for 14nm node EBDW high volume manufacturing, 832314 (21 March 2012); doi: 10.1117/12.916315
Imprint III: Templates, Masks, and Molds
Proc. SPIE 8323, Controlling template erosion with advanced cleaning methods, 832317 (21 March 2012); doi: 10.1117/12.916294
Proc. SPIE 8323, Fabrication of templates with rectangular bits on circular tracks by combining block copolymer directed self-assembly and nanoimprint lithography, 832319 (21 March 2012); doi: 10.1117/12.916592
Proc. SPIE 8323, Deformations of soft imprint templates in the nanoimprint lithography, 83231B (21 March 2012); doi: 10.1117/12.916287
Frontier Lithographic Techniques and Applications
Proc. SPIE 8323, Zone plate focused soft x-ray lithography for fabrication of nanofluidic devices, 83231D (21 March 2012); doi: 10.1117/12.915803
Proc. SPIE 8323, Multi-step Scanning Probe Lithography (SPL) on calixarene with overlay alignment, 83231G (21 March 2012); doi: 10.1117/12.916263
Imprint IV: R2R Imprint Lithography and Applications
Proc. SPIE 8323, Roll-to-roll manufacturing of electronic devices, 83231H (21 March 2012); doi: 10.1117/12.918639
Proc. SPIE 8323, Sub-100 nm pattern formation by roll-to-roll nanoimprint, 83231J (21 March 2012); doi: 10.1117/12.916584
Proc. SPIE 8323, Planarization coating for polyimide substrates used in roll-to-roll fabrication of active matrix backplanes for flexible displays, 83231K (21 March 2012); doi: 10.1117/12.916748
Proc. SPIE 8323, Roll-to-roll nanopatterning using jet and flash imprint lithography, 83231L (21 March 2012); doi: 10.1117/12.918040
Directed Self-Assembly IV: Materials for Fine Process Control
Proc. SPIE 8323, Designing new materials and processes for directed self-assembly applications, 83231M (21 March 2012); doi: 10.1117/12.916429
Proc. SPIE 8323, Directed self-assembly of laterally confined lamellae-forming diblock copolymers: polydispersity and substrate interaction effects, 83231N (21 March 2012); doi: 10.1117/12.916578
Proc. SPIE 8323, EUVL compatible LER solutions using functional block copolymers, 83231O (21 March 2012); doi: 10.1117/12.916744
Poster Session
Proc. SPIE 8323, Maskless EUV lithography: an already difficult technology made even more complicated?, 83231Q (21 March 2012); doi: 10.1117/12.899967
Proc. SPIE 8323, A phase segregating polymer blend for 2xnm feature applications, 83231R (21 March 2012); doi: 10.1117/12.916031
Proc. SPIE 8323, Detailed mesoscale dynamic simulation of block copolymer directed self-assembly processes: application of protracted colored noise dynamics, 83231T (16 April 2012); doi: 10.1117/12.918077
Proc. SPIE 8323, 25nm pitch master and replica mold fabrication for nanoimprinting lithography for 1Tbit/inch2 bit patterned media, 83231V (21 March 2012); doi: 10.1117/12.918664
Proc. SPIE 8323, Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node, 83231W (21 March 2012); doi: 10.1117/12.916064
Proc. SPIE 8323, Analysis of multibeam's scalable column for complementary e-beam lithography (CEBL), 83231X (21 March 2012); doi: 10.1117/12.916117
Proc. SPIE 8323, Multiple columns for high-throughput complementary e-beam lithography (CEBL), 83231Y (21 March 2012); doi: 10.1117/12.916118
Proc. SPIE 8323, Addressing LER through atomistic self-assembly, 83231Z (21 March 2012); doi: 10.1117/12.916231
Proc. SPIE 8323, Plasmonic lithography modeling and measurement of near-field distribution of plasmonic nano-aperture, 832320 (21 March 2012); doi: 10.1117/12.916237
Proc. SPIE 8323, Design of a high positioning contact probe for plasmonic lithography, 832322 (21 March 2012); doi: 10.1117/12.916274
Proc. SPIE 8323, Optimization of chemically amplified resist for high-volume manufacturing by electron-beam direct writing toward 14nm node and beyond, 832324 (21 March 2012); doi: 10.1117/12.916305