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21 March 2012 Future of multiple-e-beam direct-write systems
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The crossover of high-speed digital electronics, MEMS, and cost reduction presents an exciting opportunity to extend optical lithography with multiple e-beam direct write systems. Massive parallelism overcomes the throughput limitation of e-beam direct write systems. Many innovative concepts on multiple e-beam imaging have been conceived and are being developed for various applications, such as maskwriting, prototyping, writing critical layers in high volume manufacturing (HVM), and writing all layers in HVM. MEB DW systems are capable to do all of the above. For maskwriting, the writing time can be saved by between a factor of 5 and 10 but it takes similar efforts to develop the maskwriting technology as direct wafer writing. There is insufficient demand for maskwriting and prototyping tools to warrant the development efforts. Writing critical layers in HVM makes economic sense for wafer production and makes economic sense to develop the imaging tool. However, using MEB DW for critical and non-critical layers, especially for 450-mm wafers, presents a unique opportunity to save lithography cost for the 450-mm wafer technology. This is the most desirable application for MEB DW. Once this application is established, all other applications easily follow.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Burn J. Lin "Future of multiple-e-beam direct-write systems", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 832302 (21 March 2012);

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