5 March 2012 Block copolymer directed self-assembly enables sublithographic patterning for device fabrication
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The use of block copolymer self-assembly for device fabrication in the semiconductor industry has been envisioned for over a decade. Early works by the groups of Hawker, Russell, and Nealey [1-2] have shown a high degree of dimensional control of the self-assembled features over large areas with high degree of ordering. The exquisite dimensional control at nanometer-scale feature sizes is one of the most attractive properties of block copolymer self-assembly. At the same time, device and circuit fabrication for the semiconductor industry requires accurate placement of desired features at irregular positions on the chip. The need to coax the self-assembled features into circuit layout friendly location is a roadblock for introducing self-assembly into semiconductor manufacturing. Directed self-assembly (DSA) and the use of topography to direct the self-assembly (graphoepitaxy) have shown great promise in solving the placement problem [3-4]. In this paper, we review recent progress in using block copolymer directed self-assembly for patterning sub-20 nm contact holes for practical circuits.
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H.-S. Philip Wong, Chris Bencher, He Yi, Xin-Yu Bao, and Li-Wen Chang "Block copolymer directed self-assembly enables sublithographic patterning for device fabrication", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 832303 (5 March 2012); doi: 10.1117/12.918312; https://doi.org/10.1117/12.918312

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