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21 March 2012 All track directed self-assembly of block copolymers: process flow and origin of defects
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Abstract
Directed Self-Assembly (DSA) of block copolymers is considered to be a potential lithographic solution to achieve higher feature densities than can be obtained by current lithographic techniques. However, it is still not well-established how amenable DSA of block copolymers is to an industrial fabrication environment in terms of defectivity and processing conditions. Beyond production-related challenges, precise manipulation of the geometrical and chemical properties over the substrate is essential to achieve high pattern fidelity upon the self-assembly process. Using our chemo-epitaxy DSA approach offers control over the surface properties of the slightly preferential brush material as well as those of the guiding structures. This allows for a detailed assessment of the critical material parameters for defect reduction. The precise control of environment afforded by industrial equipment allows for the selective analysis of material and process related boundary conditions and assessment of their effect on defect generation. In this study, the previously reported implementation of our feature multiplication process was used to investigate the origin of defects in terms of the geometry of the initial pre-patterns. Additionally, programmed defects were used to investigate the ability of the BCP to heal defects in the resist patterns and will aid to assess the capture capability of the inspection tool. Finally, the set-up of the infrastructure that will allow the study the generation of defects due to the interaction of the BCP with the boundary conditions has been accomplished at imec.
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Paulina A. Rincon Delgadillo, Roel Gronheid, Christopher J. Thode, Hengpeng Wu, Yi Cao, Mark Somervell, Kathleen Nafus, and Paul F. Nealey "All track directed self-assembly of block copolymers: process flow and origin of defects", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230D (21 March 2012); https://doi.org/10.1117/12.916410
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