50 keV electron multibeam mask writer for the 11nm HP node: first results of the proof of concept tool (eMET POC)

Christof Klein; Hans Loeschner; Elmar Platzgummer

doi:10.1117/12.916613

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21 March 2012 50 keV electron multibeam mask writer for the 11nm HP node: first results of the proof of concept tool (eMET POC)

Christof Klein, Hans Loeschner, Elmar Platzgummer

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Proceedings Volume 8323, Alternative Lithographic Technologies IV; 83230G (2012) https://doi.org/10.1117/12.916613
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

First results obtained with IMS Nanofabrication's 50keV proof-of-concept electron multi-beam mask exposure tool (eMET POC) are presented. The eMET POC was designed from scratch to meet the requirements of the 11nm half-pitch node and features already the same column as future high volume manufacturing (HVM) tools. All exposures shown in this paper were the result of 262,144 beams of 20nm beam size working in parallel demonstrating the capability of IMS' multi-beam technology. An Alpha Tool is scheduled for 2014, followed by a Beta Tool in 2015 and 1^st generation HVM Tools in 2016.

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Christof Klein, Hans Loeschner, and Elmar Platzgummer "50 keV electron multibeam mask writer for the 11nm HP node: first results of the proof of concept tool (eMET POC)", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230G (21 March 2012); https://doi.org/10.1117/12.916613

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