Reflective electron-beam lithography: progress toward high-throughput production capability

Regina Freed; Thomas Gubiotti; Jeff Sun; Francoise Kidwingira; Jason Yang; Upendra Ummethala; Layton C. Hale; John J. Hench; Shinichi Kojima; Walter D. Mieher; Chris F. Bevis; Shy-Jay Lin; Wen-Chuan Wang

doi:10.1117/12.916090

21 March 2012 Reflective electron-beam lithography: progress toward high-throughput production capability

Regina Freed, Thomas Gubiotti, Jeff Sun, Francoise Kidwingira, Jason Yang, Upendra Ummethala, Layton C. Hale, John J. Hench, Shinichi Kojima, Walter D. Mieher, Chris F. Bevis, Shy-Jay Lin, Wen-Chuan Wang

Author Affiliations +

Proceedings Volume 8323, Alternative Lithographic Technologies IV; 83230H (2012) https://doi.org/10.1117/12.916090
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 16 nm technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) targeting high-volume 16 nm half pitch (HP) production. This paper reviews progress in the development of the REBL system towards its goal of 100 wph throughput for High Volume Manufacturing (HVM) at the 2X and 1X nm nodes. We will demonstrate the ability to print TSMC test patterns with the integrated system in photoresist on silicon wafers at 45 nm resolution. Additionally, we present simulation and experimental results that demonstrate that the system meets performance targets for a typical foundry product mix. Previously, KLA-Tencor reported on the development of a REBL tool for maskless lithography at and below the 16 nm HP technology node1. Since that time, the REBL team and its partners (TSMC, IMEC) have made good progress towards developing the REBL system and Digital Pattern Generator (DPG) for direct write lithography. Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the continued uncertainty with regards to the optical lithography roadmap beyond the 16 nm HP technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for HVM.

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Regina Freed, Thomas Gubiotti, Jeff Sun, Francoise Kidwingira, Jason Yang, Upendra Ummethala, Layton C. Hale, John J. Hench, Shinichi Kojima, Walter D. Mieher, Chris F. Bevis, Shy-Jay Lin, and Wen-Chuan Wang "Reflective electron-beam lithography: progress toward high-throughput production capability", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230H (21 March 2012); https://doi.org/10.1117/12.916090

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