Measurement of placement error between self-assembled polymer patterns and guiding chemical prepatterns

Gregory S. Doerk; Chi-Chun Liu; Joy Y. Cheng; Charles T. Rettner; Jed W. Pitera; Leslie Krupp; Teya Topuria; Noel Arellano; Daniel P. Sanders

doi:10.1117/12.916421

21 March 2012 Measurement of placement error between self-assembled polymer patterns and guiding chemical prepatterns

Gregory S. Doerk, Chi-Chun Liu, Joy Y. Cheng, Charles T. Rettner, Jed W. Pitera, Leslie Krupp, Teya Topuria, Noel Arellano, Daniel P. Sanders

Author Affiliations +

Proceedings Volume 8323, Alternative Lithographic Technologies IV; 83230P (2012) https://doi.org/10.1117/12.916421
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Extensive pattern customization will be necessary to realize viable circuit patterns from line-space arrays generated by block copolymer directed self assembly (DSA). In pattern customization with regard to chemical epitaxy of lamellar block copolymers, quantitative and precise knowledge of DSA-feature registration to the chemical prepattern is critical. Here we measure DSA pattern placement error for spatial frequency tripling and quadrupling indexed to specific lines in the chemical prepattern. A range of prepattern line widths where minimal DSA placement error can be expected is identified, and a positive correlation between DSA placement accuracy and prepattern uniformity is shown. Considering the experimental non-idealities present in the chemical prepatterns used in this work that arise from using electron-beam lithography, we anticipate that 3σ DSA placement errors will be at a minimal level if highly uniform chemical prepatterns produced by optical lithography are used.

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Gregory S. Doerk, Chi-Chun Liu, Joy Y. Cheng, Charles T. Rettner, Jed W. Pitera, Leslie Krupp, Teya Topuria, Noel Arellano, and Daniel P. Sanders "Measurement of placement error between self-assembled polymer patterns and guiding chemical prepatterns", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230P (21 March 2012); https://doi.org/10.1117/12.916421

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