21 March 2012 Progress towards the integration of optical proximity correction and directed self-assembly of block copolymers with graphoepitaxy
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Proceedings Volume 8323, Alternative Lithographic Technologies IV; 83230X (2012); doi: 10.1117/12.916525
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States
Abstract
A photomask design flow for generating guiding patterns used in graphoepitaxial DSA processes is proposed and tested. In this flow, a new fast DSA model is employed for DSA structure verification. The execution speed and accuracy of the fast model were benchmarked with our previously reported Monte Carlo method. We demonstrated the process window verification using the OPC/DSA flow with the fast DSA model and compared this with experimental results in the guiding patterns simulated by e-beam lithography.
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Chi-Chun Liu, Jed Pitera, Neal Lafferty, Kafai Lai, Charles Rettner, Melia Tjio, Noel Arellano, Joy Cheng, "Progress towards the integration of optical proximity correction and directed self-assembly of block copolymers with graphoepitaxy", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230X (21 March 2012); doi: 10.1117/12.916525; https://doi.org/10.1117/12.916525
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KEYWORDS
Directed self assembly

Performance modeling

Monte Carlo methods

Optical proximity correction

Photomasks

3D modeling

Lithography

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