21 March 2012 Contact hole shrink process using directed self-assembly
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Abstract
We report on a contact hole shrink process using directed self-assembly. A diblock copolymer, poly (styrene-blockmethyl methacrylate) (PS-b-PMMA), is used to shrink contact holes. Contact hole guide patterns for graphoepitaxy are formed by ArF photoresists. Cylindrical domains of PMMA is removed using organic solvents after DUV (λ <200 nm) irradiation. In this work, it is found that a solvent system is the best developer from the evaluated single solvent systems and mixed solvent systems. The wet development of PS-b-PMMA strongly depends on total exposure dose of DUV irradiation. With lower exposure dose, the cylindrical domains of PMMA are not clearly removed. With optimum exposure dose, PMMA is developed clearly. The contact hole guide patterns of 75 nm in diameter are successfully shrunk to 20 nm in diameter using the wet development process.
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Yuriko Seino, Yuriko Seino, Hiroki Yonemitsu, Hiroki Yonemitsu, Hironobu Sato, Hironobu Sato, Masahiro Kanno, Masahiro Kanno, Hikazu Kato, Hikazu Kato, Katsutoshi Kobayashi, Katsutoshi Kobayashi, Ayako Kawanishi, Ayako Kawanishi, Tsukasa Azuma, Tsukasa Azuma, Makoto Muramatsu, Makoto Muramatsu, Seiji Nagahara, Seiji Nagahara, Takahiro Kitano, Takahiro Kitano, Takayuki Toshima, Takayuki Toshima, } "Contact hole shrink process using directed self-assembly", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230Y (21 March 2012); doi: 10.1117/12.915652; https://doi.org/10.1117/12.915652
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